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|Phase||1 & 3|
|Current||1 Amp to 2000 Amp.|
|Frequency||50 to 60 Hz|
|Voltage||600V to 1800V|
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device.