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Power Semiconductor
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Product Details:
Phase
1 & 3
Current
1 Amp to 2000 Amp.
Brand
Infineon
Frequency
50 to 60 Hz
Type
Power Semiconductors
Voltage
600V to 1800V
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device.